It is an early mainstream structure of Insulated Gate Bipolar Transistor (IGBT). The core is to achieve carrier "punch-through" effect through the N+ buffer layer. With advantages of low voltage drop and fast switching, it is mainly used in medium and low voltage, high-frequency, and high-efficiency scenarios up to 600V.

Features:
Advantage:
Lower on-state voltage drop: A thinner drift region results in lower conduction loss.
Fast turn-off speed: The N⁺ buffer layer accelerates the extraction of carriers, resulting in a small turn-off tail current.
Mature technology and low cost: The planar gate technology is simple and offers high cost-performance ratio.
Shortcoming:
Reverse withstand voltage limited: usually 600V~1200V, not suitable for ultra-high voltage.
High switch loss: The turn off loss is higher than that of NPT and FS types, and is not suitable for ultra-high frequency.
The short-circuit tolerance is weak.

Typical Applications:
1. Industrial frequency conversion and motor drive
    Frequency converter: motor speed regulation for fans, water pumps, and machine tools (600V/1200V).
    Servo control: medium and low-power automation equipment.
2. Power supply and uninterruptible power supply (UPS)
    Switching power supply (SMPS): communication power supply, industrial high-power power supply.
    UPS: Inverter bridge of backup and online UPS.
3. White goods and small appliances
    Inverter air conditioner/refrigerator: compressor drive (600V level).
    Induction cooker / microwave oven: high-frequency induction heating.
4. New energy and power quality
    Photovoltaic inverter: inverter stage of string and centralized inverters.
    Power Conversion System (PCS): Low-voltage energy storage system.
5. Other industrial equipment
    Inverter welding machine: high-frequency (tens of kHz) arc welding power source.
    Electroplating power supply, electrolysis power supply.
    Electric vehicles: some on-board chargers (OBCs), low-voltage auxiliary power supplies.