It is a medium-to-high voltage power semiconductor device with optimized turn-off characteristics. The core of its design lies in achieving smoother electric field truncation through a low-doped N-type buffer layer, while simultaneously ensuring low loss, low overshoot, and high reliable parallel operation. It represents the mainstream technology for the 1200V~1700V voltage class
Features:
Loss optimization: The total energy loss is reduced by approximately 20% compared to the NPT module of the same generation, taking into account both static (on-state) and dynamic (switching) losses.
Positive Temperature Coefficient (PTC): The on-state voltage drop increases with the rise of junction temperature. When connected in parallel, it automatically balances the current, suppresses "current scrambling", and is suitable for high-current modules (such as E1/E2 packages, with a rated current up to 2400A).
Immunity and reliability: The turn-off waveform is smooth, with small voltage overshoot, making it EMC-friendly; the short-circuit withstand capability is ≥10μs (Tj=150℃), and high di/dt is controllable.
Typical Applications:
1. Industrial automation: frequency converters, servo drives, and industrial robot drives, which enhance energy efficiency and production efficiency through speed regulation and precise control.
2. New energy power generation: Wind power/photovoltaic inverters, power storage converters (PCS), achieving efficient energy conversion and grid connection, supporting the "dual carbon" goals.
3. Transportation: Rail transit traction converters, new energy vehicle motor controllers, and on-board chargers, balancing efficiency and reliability.
4. Power system: Flexible AC transmission system (FACTS), high-voltage direct current (HVDC) circuit breaker, ensuring grid stability and power quality.
5. Other scenarios: induction heating power supplies, UPS systems, high-power welding machines, adapting to high-frequency soft switching and high power density requirements.
