Insulated Gate Bipolar Transistors (IGBTs), which are manufactured using **monocrystalline silicon (Si)** as the substrate, are currently the most mature and widely used power devices in the industrial and power electronics fields.
It combines the high input impedance and easy drive of MOSFETs with the low on-state voltage drop and high current capability of BJT bipolar transistors, making it a voltage-controlled power switching device.

Features:
Mature technology, low cost, and high reliability
Wide voltage coverage: 600V~6500V
High current level, suitable for high-power scenarios
Simple drive, moderate loss

Typical Applications:
1. New energy & transportation
    New energy vehicles: motor controller, OBC, DC-DC
    High-speed rail/rail transit: traction converter
    Electric buses, forklifts, and construction machinery
2. New energy power generation
    PV inverter
    Wind power converter
   Power Conversion System (PCS) for energy storage
3. Industrial equipment
    Frequency converter, servo driver
    Electric welding machine, induction heating equipment
    UPS, switching power supply, electroplating/electrolysis power supply
4. Home appliances and consumer electricity
    Variable frequency air conditioner, variable frequency refrigerator
    Induction cooker, microwave oven
5. Power grid and electrical equipment
    Flexible DC transmission (VSC-HVDC)
    Reactive power compensation device (SVG, STATCOM)

Limitation:
The switching speed is inferior to that of SiC MOSFET
Limited high-temperature performance (typically up to 175℃ junction temperature)
The loss is relatively large at high frequencies