Silicon Carbide (SiC) IGBT is an insulated gate bipolar transistor made using the third-generation semiconductor material Silicon Carbide (SiC). It is primarily targeted at ultra-high voltage, high temperature, and high frequency applications, and its performance is far superior to traditional silicon (Si)-based IGBTs.

Features:
Ultra-high voltage: primarily targeting 6.5kV-20kV levels (silicon IGBTs are typically ≤6.5kV).
Extremely low loss: The total loss at high frequencies is only 1/5 to 1/10 of that of silicon IGBTs.
High temperature stability: Operating temperature 175-200℃, simplified heat dissipation.
High power density: The system's volume and weight can be reduced by 30%-50%.

Typical Applications:
1. Flexible DC transmission (VSC-HVDC) / grid flexible DC
    Core value: 10-20kV SiC IBT directly replaces multiple silicon devices in series, resulting in increased system efficiency, reduced size, and enhanced reliability.
2. Rail transit (high-speed rail/subway traction converter)
    Core values: High temperature resistance, high power density, and adaptability to narrow spaces and harsh working conditions of locomotives.
3. New energy power generation (large-scale photovoltaic/wind power grid-connected inverter)
    Core values: High frequency, low loss, improved conversion efficiency, and compatibility with 1500V+ high-voltage systems.
4. Industrial high-voltage power supply / Induction heating / Electrolysis power supply
    Core values: high frequency and efficiency, significant energy saving, and substantial reduction in equipment size.
5. Electric vehicle (high-end 800V platform main inverter)
    Core value: Enhance electric drive efficiency, increase endurance, and support ultra-high power fast charging.